Soitec Bets on 6G: Record Results Unveiled at MWC 2026

Pioneering Research in 6G Connectivity

Soitec and NTU Singapore have jointly conducted a four-year research program focusing on next-generation 6G connectivity. This collaboration has resulted in three benchmark technical papers, demonstrating the high performance of gallium nitride (GaN) devices created on Soitec's advanced epitaxial wafers. These results mark a significant milestone for 6G connectivity in FR3 and millimeter-wave (mmWave) frequency bands.

Breakthroughs in GaN on Silicon

The joint NTU-Soitec research team, utilizing specialized GaN on silicon epitaxial substrates developed at Soitec Belgium, achieved a record power density coupled with an enhanced power-added efficiency (PAE) at low voltage, suitable for battery-powered devices. NTU researchers achieved PAE levels over 60% in mmWave. These results demonstrate the capability of GaN on silicon to combine very high radiofrequency performance with the cost benefits, scalability, and integration advantages of silicon platforms.

Advantages Over Traditional Solutions

Compared to traditional gallium arsenide (GaAs) based solutions, GaN-on-Si can offer higher output power, improved thermal management, and reduced system complexity, while enabling more compact and efficient radio frequency module architectures. These advancements pave the way for more compact and energy-efficient 6G base stations, as well as a new generation of mobile terminals, while accelerating the maturation of the global GaN ecosystem in both infrastructure and consumer markets.